? 2010 ixys all rights reserved 1 - 6 20100614b vmo 1200-01f v dss = 100 v i d25 = 1220 a r ds(on) = 1.25 m max. polarht? module mosfet symbol conditions maximum ratings v dss t vj = 25c to 150c 100 v v gs 20 v i d25 i d80 t c = 25c t c = 80c 1220 970 a a i f25 i f80 t c = 25c (diode) t c = 80c (diode) 1220 970 a a n-channel enhancement mode symbol conditions characteristic values (t vj = 25 c, unless otherwise specifed) min. typ. max. r dson v gs = 10 v; i d = i d80 t vj = 25c t vj = 125c 1.00 1.62 1.25 2.00 m m v gs(th) v ds = 20 v; i d = 3 ma 3 5 v i dss v ds = 0.8 ? v dss ; v gs = 0 v; t vj = 25c t vj = 125c 0.3 6 ma ma i gss v gs = 20 v; v ds = 0 v 1.2 a q g q gs q gd v gs = 10 v; v ds = 50 v; i d = 1000 a 1710 396 1020 nc nc nc t d(on) t r t d(off) t f e on e off e rec inductive load v gs = 10 v; v ds = 50 v i d = 1000 a; r g = 1.8 t vj = 25c r g = r g ext + r out driver 360 1620 460 1020 7.7 62.3 0.57 ns ns ns ns mj mj mj t d(on) t r t d(off) t f e on e off e rec inductive load v gs = 10 v; v ds = 50 v i d = 1000 a; r g = 1.8 t vj = 125c r g = r g ext + r out driver 400 1640 560 820 8.5 58.9 0.82 ns ns ns ns mj mj mj r thjc r thjh with heat transfer paste (ixys test setup) 0.065 0.053 0.088 k/w k/w features ? polarht? mosfet technology - low r dson - dv/dt ruggedness - fast intrinsic re verse diode ? package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary ter minals possible - kelvin source terminals for easy drive - isolated dcb ceramic base plate applications ? conv erters with high power density for - main and auxiliary ac dr ives of electric vehicles - dc drives - power supplies d s g ks s d g ks
? 2010 ixys all rights reserved 2 - 6 20100614b vmo 1200-01f module symbol conditions ratings min. typ. max. t vj t stg -40 -40 150 125 c c v isol i isol < 1 ma, 50/60 hz 3600 v~ m d mounting torque (m6) terminal connection torque (m6) 2.25 4.5 2.75 5.5 nm nm weight 250 g source drain diode symbol conditions characteristic values min. typ. max. v sd i f = 1000 a; v gs = 0 v; t vj = 25c t vj = 125c 1.03 0.96 v v t rr q rr i rm v ds = 50 v; i f = 1000 a t vj = 25c di f /dt = 650 a/s 300 12.7 72 ns c a t rr q rr i rm v ds = 50 v; i f = 1000 a t vj = 125c di f /dt = 630 a/s 340 18 88 ns c a product marking ordering part name marking on product delivering mode base qty code key standard VMO1200-01F VMO1200-01F box 2 501051
? 2010 ixys all rights reserved 3 - 6 20100614b vmo 1200-01f optional accessories for modules keyed twin plugs (ul758, style 1385, csa class 5851, guide 460-1-1) ? type zy180l with wire length 350mm - for pins 4 ( g ate, yellow wire) and 5 (kelvin s ource, red wire) dimensions in mm (1 mm = 0.0394)
? 2010 ixys all rights reserved 4 - 6 20100614b vmo 1200-01f -40 0 40 80 120 160 0.8 0.9 1.0 1.1 1.2 t vj [c] i d [a] v dss normal. 0 2 4 6 8 10 0 200 400 600 800 1000 v gs [v] -50 -25 0 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.8 1.6 2.4 3.2 4.0 0 200 400 600 800 1000 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 0 200 400 600 800 1000 0 1 2 3 4 5 0 200 400 600 800 1000 7 v 8 v v ds [v] i d [a] i dss = 6 ma t j = 125c t j = 25c v gs = 6 v 9 v 10 v 15 v t j = 25c v ds [v] i d [a] 7 v 8 v v gs = 5 v 9 v 10 v 15 v 6 v r ds(on) normal. t vj [c] r ds(on) [m ] t j = 125c r ds(on) normalized r ds(on) i d [a] r ds(on) [m ] t vj = 125c v ds = 6 v 7 v 8 v 9 v 10 v 15 v fig. 2 typical transfer characteristic fig. 3 typical output char acteristic fig. 4 typical output char acteristic fig. 5 typ . drain source on-state resistance r ds(on) versus junction temperature t vj fig. 5 typ. drain source on-state resistance r ds(on) versus i d fig. 1 drain source breakdown voltage v dss versus junction temperature t vj
? 2010 ixys all rights reserved 5 - 6 20100614b vmo 1200-01f di f /dt [a/s] 200 300 400 500 600 700 t rr [ns] 280 300 320 340 360 380 400 v r = 50 v i d = 1000 a t vj = 25c i d [a] 0 200 400 600 800 1000 0 4 8 12 16 0 400 800 1200 1600 t r t d(on) e on e rec(off) e on , e rec [mj] t [ns] 0 2 4 6 8 10 0 5 10 15 20 25 30 0 500 1000 1500 2000 2500 3000 t r r g [ ] e on , e rec [mj] t [ns] i d = 1000 a v ds = 50 v v gs = 0/10 v t vj = 125c t d(on) e on e rec(on) 0 2 4 6 8 10 50 55 60 65 70 75 80 85 90 400 600 800 1000 1200 1400 1600 1800 2000 t f r g [ ] e off [mj] t [ns] i d = 1000 a v ds = 50 v v gs = 0/10 v t vj = 125c t d(off) e off 0 200 400 600 800 1000 0 20 40 60 80 100 0 200 400 600 800 1000 e off t r t d(off) i d [a] e off [mj] t [ns] q g [nc] 0 400 800 1200 1600 2000 v gs [v] 0 2 4 6 8 10 12 v ds = 50 v i d = 1000 a t vj = 25c r g = 1.8 v ds = 50 v v gs = 0/10 v t vj = 125c r g = 1.8 v ds = 50 v v gs = 0/10 v t vj = 125c fig. 6 typ. turn-on energy & switching times vs. drain source current, inductiv e switching fig. 7 typ . turn-off energy & switching times vs. drain source current, inductiv e switching fig. 8 typ . turn-on energy & switching times vs. gate resistor, inductiv e switching fig. 9 typ . turn-off energy & switching times vs. gate resistor, inductiv e switching fig. 10 typical gate charge char acteristic fig. 11 typ . reverse recovery time t rr of the body diode versus di/dt
? 2010 ixys all rights reserved 6 - 6 20100614b vmo 1200-01f di f /dt [a/s] 200 300 400 500 600 700 4 6 8 10 12 14 16 18 20 22 24 di f /dt [a/s] 200 300 400 500 600 700 i rm [a] 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 200 400 600 800 1000 q rr [c] v sd [v] i s [a] v r = 50 v i d = 1000 a t vj = 25c v r = 50 v i d = 1000 a t vj = 25c t [ms] 1 10 100 1000 10000 r thjh [k/w] 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 fig. 16 typ. transient thermal impedance with heat tranfer paste (ixys test setup) fig. 13 typ . reverse recovery current i rm of the body diode versus di/dt fig. 14 typical re verse recovery charge q rr of the body diode versus di/dt fig. 15 source drain current i f (body diode) vs. typical source drain v oltage v sd fig. 17 defnition of switching times 0.9 v gs 0.1 v gs 0.9 i d 0.9 i d 0.1 i d v gs v ds i d 0.1 i d t t t r t f t d(on) t d(off)
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